Black Phosphorus Carbide Infrared Phototransistor for high speed and low light applicationsTechnology #2017-037
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Black Phosphorus Carbide Infrared Phototransistor for high speed and low light applications
Photodetectors are a key component of many devices we use in our daily life. From metrology and imaging to optical communications, we rely on photodetectors to convert the information stored in light into electrical signals that can be processed by standard electronics. Due to its wide applications as a sensor in current technologies, it is therefore of great interest to find novel functional materials not only with high sensitivity, but also with wide absorption spectrum for more efficient detection at all wavelengths. Current commercial photodetectors based on three-dimensional (3D) material such as Silicon (Si) and Indium Gallium Arsenide (InGaAs), are opaque and brittle in bulk form, and thus are not a suitable sensor’s material for use in flexible optoelectronics in the coming age of the internet of things. Although photodetectors based on 2D materials are more flexible than bulk semiconductor, as of now, they do not show satisfactory performance in terms of gain and response time.
Prof Ang Kah Wee of the Department of Electrical and Computer Engineering has invented a high-performance composite few-layer b-PC phototransistor fabricated via a novel carbon doping technique, which achieved a high responsivity (R) of 2163 A/W, a short response time of 5.6 ps, a low shot noise equivalent power (NEPshot) of 1.3 fW/Hz1/2, and an intrinsic absorption spectrum with non-zero absorption at 8000 nm all under ambient and room temperature conditions. The maximum responsivity of 2163 A/W and minimum response speed of 5.6 ps of the b-PC demonstrated here with our measurement setup is one of the highest in the literature, as shown in Figure 1 below, enabling it to be used for high speed and low light applications.
Figure 1: The maximum responsivity and minimum response time of b-PC phototransistor and other photodetectors reported in the literature. The values in bracket represent the applied bias voltage in volts and the excitation wavelength in nm.
Application and advantages
Possible applications are in optical power meters, RGB
colour sensor for LCD backlight colour adjustment, sunlight sensors to control
air flow for vehicle air conditioners, radiation detectors and surveillance
Fast response (5.6 ps) and high responsivity (2163A/W) for
high speed and low light applications
Low shot noise equivalent power (NEPshot) of 1.3 fW/Hz1/2 for
high sensitivity applications
Wide absorption spectrum ranging from visible light to infra-red
Phototransistor, black phosphorus carbide, infra-red, visible light
ILO Reference: 2017-037
Technology Readiness Level
TRL 3, material for testing, benchmarking, scalability testing.
Professor Ang Kah Wee (http://angkw0.wixsite.com/angkahwee)
Get in touch with Technology Manager
Tan Yan Ny
Phone: + 65 6601 2812