High-performance Magnetoresistance Sensor based on Graphene and Black Phosphorous HybridTechnology #2016-196
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High-performance Magnetoresistance Sensor based on Graphene and Black Phosphorous Hybrid
Inventors : Kian Ping LOH, Yanpeng LIU, Jiong LU
Magnetoresistance sensors are used widely in computers, airplanes, automobiles etc and its applications are increasing in numbers. Conventional magnetoresistance sensors, which works by measuring the electrical resistance of one material exposed to an external magnetic field, are quite sensitive in low fields but not suitable for high field detection. And although modern Hall resistance sensors has reasonable resolution in moderate and high magnetic field, this technology suffers from high cost and high temperature coefficient of resistance.
Hence, there is a need to develop magnetic sensors which are not only highly sensitive in the whole magnetic field range but also low cost and possess low temperature coefficient of resistance.
NUS researchers have developed a highly sensitive magnetoresistance sensor which is operational up to 400K using a vertical structure made of monolayer graphene on black phosphorus. The vertical hybrid structure of graphene and black phosphorus successfully overcomes the limit of monolayer graphene and attains a high-performance giant magnetoresistance (GMR) sensor.
The underlying black phosphorus introduces anisotropic strain to graphene and break graphene’s symmetry. The resulting magnetic resistance increment of graphene is up to 775% at 9 Tesla magnetic field at 400K.
• Uses only a single layer of graphene.
• Enables effective mass manufacturing as production of large area monolayer graphene has entered into the first stage of commercialization.
• High temperature stability of up to at least 400K
For more information, contact:
NUS Industry Liaison Office, HJ Chen, +65 6601 2814, email@example.com, ilo.nus.edu.sg