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Face-to-Face Transfer of Water-scale Graphene Films

Technology #13124n

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Prof Loh Kian Ping
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Dr Tan Yan Ny (
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US Patent Pending
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Face-to-Face Transfer of Water-scale Graphene Films

Market Need

Graphene is attractive for a wide range of applications such as high frequency transistors, flexible electronics and conducting and transparent electrodes. Growth of graphene by chemical vapor deposition on Cu foils has emerged as a powerful technique owing to its compatibility with industrial-scale roll-to-roll technology. However, graphene needs to be transferred from its growth substrate (Cu) to the target surface (for eg. Si, SiO2 or polymer). High fidelity transfer or direct growth of high quality graphene films on arbitrary substrates (eg. Si/SiO2) is needed to enable the implementation of graphene in various applications. However, current transfer processes introduce unwanted defects while direct growth of graphene on SiO2/Si wafer yield discontinuous, nanometer-sized islands.


Prof. Loh Kian Ping’s group from the Department of Chemistry has developed an in-situ face-to-face transfer technique for wafer-scale graphene films, which accomplishes both the growth and transfer steps on one wafer. To further elaborate, in conventional processes, graphene growth is performed on a growth substrate (Cu) wafer and subsequently transferred to a separate target substrate (eg. Si/SiO2) wafer. In the subject transfer technique, graphene growth on Cu substrate and subsequent transfer to target substrate occurs on a single wafer. This spontaneous transfer method relies on nascent gas bubbles and capillary bridges between the graphene film and the underlying substrate during etching of the metal catalyst, which is analogous to the method used by tree frogs to remain attached to submerged leaves. Our technique has been published in Nature.

Figure 1: Raman spectra comparison between different transfer processes, showing this in situ face to face (F2F) transfer method can maintain the high quality graphene films, as seen from the higher intensity of the 2D band as compared to conventional Float transfer.

Application and advantages

Potential application is for graphene transfer, as a key enabling step for graphene manufacturing.

The advantages are:

  • Faster processing speed (at least 12X faster) compared to conventional float transfer
  • Direct growth and spontaneous attachment of graphene on the underlying substrate is compatible with batch processing in semiconductor industry
  • Gentle transfer method leading to reduced density of transfer defects compared with conventional transfer enables optoelectronic applications on silicon platform
  • Potential cost savings as graphene growth and transfer steps performed on a single wafer instead of using 2 wafers


Graphene, transfer, face-to-face, method

IP Status: Patent pending

ILO Reference: 13124N

Principal Inventor

Prof Loh Kian Ping:

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Phone: +65-66012812